rl201-g thru. rl207-g forward current: 2.0a reverse v oltage: 50 to 1000v rohs device general purpose silicon rectifier qw -bg01 1 page 1 rev :b features - dif fused junction. -low forward voltage drop. -low reverse leakage current. -high current capability . mechanical data -case: jedec do-15 molded plastic. -epoxy: ul94v -0 rate flame retardant -polarity: color band denotes cathode end mounting position: any -w eight: 0.39gram maximum ratings and electrical characteristics ratings at 25c ambient temperature unless otherwise specified. single phase, half wave, 60hz, resistive or inductive load. for capacitive load derate current by 20%. pa ra m et er sy m bo l un it maximum repetitive peak reverse voltage maximum rms voltage maximum dc blocking voltage maximum average forward rectified current 0.375"(9.5mm) lead length @t a =50c peak forward surge current, 8.3ms single half sine-wave superimposed on rated load (jedec method) maximum forward voltage at 2.0a dc maximum reverse current at rated dc blocking voltage operating temperature range storage temperature range @t j =25c t ypical junction capacitance (note 1) t ypical thermal resistance (note 2) rl201-g 50 35 50 v rrm v rms v dc i (a v) i fsm v f i r c j r ja t j t stg 2.0 60 1.1 5 50 20 40 -55 ~ +150 -55 ~ +150 v v v a a v pf c c a c/w rl202-g 100 70 100 rl203-g 200 140 200 rl204-g 400 280 400 rl205-g 600 420 600 RL206-G 800 560 800 rl207-g 1000 700 1000 notes: 1. measured at 1.0mhz and applied reverse voltage of 4.0v dc. 2. thermal resistance junction to ambient. d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r ) d o - 1 5 0 . 3 0 0 ( 7 . 6 ) 1 . 0 0 0 ( 2 5 . 4 0 ) m i n . 0 .1 4 1 (3 .6 ) d ia . 0. 03 5( 0. 9) d ia . 0. 02 8( 0. 7) d ia . 0 .1 0 2 (2 .6 ) d ia . 0 . 2 2 8 ( 5 . 8 ) 1 . 0 0 0 ( 2 5 . 4 0 ) m i n . @t j =100c company reserves the right to improve product design , functions and reliability without notice. comchip t echnology co., l td.
ra ting and characteristic cur ves (rl201-g thru. rl207-g) page 2 qw -bg01 1 rev :b fig.1 forward current derating curve 0 a v e r a g e f o r w a r d c u r r e n t ( a ) ambient t emperature (c) 0 7 5 1 7 5 fig.2 max. non-repetitive surge current 0 p e a k f o r w a r d s u r g e c u r r e n t ( a ) number of cycles at 60hz 0 1 0 0 1 0 2 0 4 0 fig.3 t ypical junction capacitance 5 0 1 0 0 5 0 6 0 1 2 5 1 . 0 2 . 0 3 . 0 1 0 7 0 fig.4 t ypical characteristics forward single phase half wave, 60hz resistive or inductive load 0.375"(9.5mm) lead length 2 5 1 5 0 single half sine- wave (jedec method) 0 . 0 1 i n s t a n t a n e o u s f o r w a r d c u r r e n t ( a ) instantaneous forward v oltage (v) 0 . 2 0 . 1 1 0 0 . 8 0 . 4 0 . 6 1 . 0 1 . 6 1 . 2 1 . 4 1 . 0 t j =25c pulse width=300us 1 j u n c t i o n c a p a c i t a c n e ( p f ) reverse v oltage (v) 0 . 1 1 0 0 1 1 0 1 0 0 1 0 t j =25c f=1mhz general purpose silicon rectifier pulse width 8.3ms 3 0 comchip t echnology co., l td.
standard packaging marking code xxx = product type marking code marking code rl201 rl202 rl203 rl204 rl205 rl206 rl207 part number rl201 -g rl202 -g rl203 -g rl204 -g rl205 -g rl206 -g rl207 -g c a s e t y p e d o - 1 5 b o x ( p c s ) 3 , 0 0 0 a m m o p a c k c a r t o n ( p c s ) 3 0 , 0 0 0 r l x x x page 3 qw -bg01 1 rev :b general purpose silicon rectifier t aping specification for axial lead diodes b l 1 l 2 e a z t e 90 5 l h w b z t e 5 . 0 0 0 . 5 0 5 2 . 4 0 1 . 5 0 6 . 0 0 0 . 4 0 1 . 2 0 ( m a x ) 0 . 8 0 ( m a x ) 2 . 0 6 3 0 . 0 5 9 0 . 1 9 7 0 . 0 2 0 0 . 0 4 7 ( m a x ) 0 . 2 3 6 0 . 0 1 6 0 . 0 3 1 ( m a x ) a l 1 0 . 0 3 9 ( m a x ) 1 . 0 0 ( m a x ) l 2 0 . 0 3 9 ( m a x ) 1 . 0 0 ( m a x ) s y m b o l ( m m ) ( i n c h ) d o - 1 5 s y m b o l ( m m ) ( i n c h ) d o - 1 5 l w h 7 8 . 0 5 . 0 3 . 0 7 1 0 . 1 9 7 9 5 . 0 5 . 0 3 . 7 4 0 0 . 1 9 7 2 5 5 . 0 5 . 0 1 0 . 0 3 9 0 . 1 9 7 comchip t echnology co., l td.
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